发明名称 METHOD OF PRODUCING NITRIDE BASED SINGLE-CRYSTAL SUBSTRATE
摘要 A method for fabricating a nitride single crystalline substrate is provided to minimize a stress on an interface between a substrate and a nitride single crystal by forming grooves on the surface of a substrate for growing a nitride wherein the upper surface of the substrate can be divided into a plurality of regions by the grooves. A substrate(21) for growing a nitride single crystal(23) is prepared. At least one groove is formed on the substrate so that the upper surface of the substrate is divided into a plurality of regions. A nitride single crystal is grown on the substrate. The substrate is removed from the nitride single crystal. In a step for growing the nitride single crystal, the substrate is divided along the groove into a plurality of regions by increased stress caused by an increased thickness of the nitride single crystal. The grooves can have a plurality of straight line types that are arranged widthwise and lengthwise on the upper surface of the substrate.
申请公布号 KR100809211(B1) 申请公布日期 2008.02.29
申请号 KR20060101766 申请日期 2006.10.19
申请人 SAMSUNG ELECTRO-MECHANICS CO., LTD. 发明人 KIM, TAE HYUNG;KIM, NAM SEUNG;YANG, JONG IN;LEE, SI HYUK
分类号 H01L21/20;H01L21/301 主分类号 H01L21/20
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