METHOD OF PRODUCING NITRIDE BASED SINGLE-CRYSTAL SUBSTRATE
摘要
A method for fabricating a nitride single crystalline substrate is provided to minimize a stress on an interface between a substrate and a nitride single crystal by forming grooves on the surface of a substrate for growing a nitride wherein the upper surface of the substrate can be divided into a plurality of regions by the grooves. A substrate(21) for growing a nitride single crystal(23) is prepared. At least one groove is formed on the substrate so that the upper surface of the substrate is divided into a plurality of regions. A nitride single crystal is grown on the substrate. The substrate is removed from the nitride single crystal. In a step for growing the nitride single crystal, the substrate is divided along the groove into a plurality of regions by increased stress caused by an increased thickness of the nitride single crystal. The grooves can have a plurality of straight line types that are arranged widthwise and lengthwise on the upper surface of the substrate.
申请公布号
KR100809211(B1)
申请公布日期
2008.02.29
申请号
KR20060101766
申请日期
2006.10.19
申请人
SAMSUNG ELECTRO-MECHANICS CO., LTD.
发明人
KIM, TAE HYUNG;KIM, NAM SEUNG;YANG, JONG IN;LEE, SI HYUK