SEMICONDUCTOR MEMORY DEVICE AND DRIVING METHOD THEREOF

摘要

A semiconductor memory device and a driving method thereof are provided to perform delay locking operation more easily by receiving a system clock with high frequency. A first clock input buffer(110) outputs a first internal clock by buffering a system clock signal in correspondence to an inverted system clock, and corrects duty ratio of the first internal clock in response to a control signal. A second clock input buffer(120) outputs a second internal clock by buffering the inverted system clock signal in correspondence to the system clock, and corrects duty ratio of the second internal clock in response to the control signal. An analog duty correction circuit(130) outputs the control signal corresponding to the duty ratio of the first internal clock and the second internal clock. A delay locking circuit outputs a delay locked clock signal using the third internal clock.