发明名称 |
Organic thin film transistor and manufacturing method thereof |
摘要 |
<p>An OTFT is provided which is characterized by including a substrate (10) having therein a groove and one of a groove and a hole, a source electrode (15) filling the one of the groove and the one of the groove and the hole, a drain electrode (14) filling the other one of the groove and the one of the groove and the hole, a film (13) of organic semiconductor material formed on the source electrode (15) and the drain electrode (14) for making electrical contact therewith, a gate insulating film (12) formed on the film (13) of organic semiconductor material, and a gate electrode (11) formed on the gate insulating film (12). A method of manufacturing the OTFT allows realization of high precision microfabrication of the source electrode (15) and the drain electrode (14) formed on the substrate (10) such as a plastic substrate (10) by an inexpensive process for stable realization of high performance.
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申请公布号 |
EP1780815(A3) |
申请公布日期 |
2008.02.27 |
申请号 |
EP20060021020 |
申请日期 |
2006.10.06 |
申请人 |
FUJI ELECTRIC HOLDINGS CO., LTD. |
发明人 |
KAWAKAMI, HARUO;KATO, HISATO;MAEDA, TAKAHIKO;SEKINE, NOBUYUKI |
分类号 |
H01L51/00;H01L51/05;H01L51/10 |
主分类号 |
H01L51/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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