发明名称 Organic thin film transistor and manufacturing method thereof
摘要 <p>An OTFT is provided which is characterized by including a substrate (10) having therein a groove and one of a groove and a hole, a source electrode (15) filling the one of the groove and the one of the groove and the hole, a drain electrode (14) filling the other one of the groove and the one of the groove and the hole, a film (13) of organic semiconductor material formed on the source electrode (15) and the drain electrode (14) for making electrical contact therewith, a gate insulating film (12) formed on the film (13) of organic semiconductor material, and a gate electrode (11) formed on the gate insulating film (12). A method of manufacturing the OTFT allows realization of high precision microfabrication of the source electrode (15) and the drain electrode (14) formed on the substrate (10) such as a plastic substrate (10) by an inexpensive process for stable realization of high performance. </p>
申请公布号 EP1780815(A3) 申请公布日期 2008.02.27
申请号 EP20060021020 申请日期 2006.10.06
申请人 FUJI ELECTRIC HOLDINGS CO., LTD. 发明人 KAWAKAMI, HARUO;KATO, HISATO;MAEDA, TAKAHIKO;SEKINE, NOBUYUKI
分类号 H01L51/00;H01L51/05;H01L51/10 主分类号 H01L51/00
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