| 发明名称 |
Memory pumping circuit |
| 摘要 |
A memory pumping circuit is proposed. The feature of the present invention is the charging capacitor of the pumping circuit is a DRAM cell for enhancing the capacitance.
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| 申请公布号 |
US7336521(B2) |
申请公布日期 |
2008.02.26 |
| 申请号 |
US20030696525 |
申请日期 |
2003.10.29 |
| 申请人 |
WINBOND ELECTRONICS CORP. |
发明人 |
CHEN CHIENG-CHUNG |
| 分类号 |
G11C11/24;G11C5/14;G11C11/408 |
主分类号 |
G11C11/24 |
| 代理机构 |
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