Ultraviolet blocking layer

摘要

Semiconductor structures and methods of fabricating semiconductor structures are disclosed. The method comprises the steps of: providing an initial semiconductor structure; forming a non-silicon layer overlying the initial semiconductor structure, the non-silicon layer having an extinction coefficient greater than zero at wavelengths below about 300 nanometers; and performing a plasma-based process to form a layer overlying the non-silicon layer, the non-silicon layer preventing the ultraviolet radiation generated during the plasma-based process from damaging the initial semiconductor structure.