| 摘要 |
A new surface acoustic wave device in which higher frequency can be achieved and that shows enhanced temperature characteristics, is provided in a surface acoustic wave device utilizing an SH type high speed surface wave, when an IDT electrode is formed on a quartz substrate whose Euler angle is represented as (0°, theta [theta is from 125 to 142]°, 90°), temperature coefficient of frequency of the quartz substrate at given temperature is made be minus by controlling the film thickness of the IDT electrode, and thereafter the IDT electrode is covered by a thin film having temperature coefficient of frequency that is plus at the given temperature. According to this, since the temperature coefficient of frequency TCF of the whole device becomes zero and second order temperature coefficient beta is enhanced, a surface acoustic wave device in which higher frequency is easily achieved and that has enhanced temperature characteristics can be provided.
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