| 摘要 |
A method for forming a contact hole of a semiconductor device is provided to increase an active region of a semiconductor device and reduce contact resistance by depositing a similar material to a semiconductor substrate on an exposed portion of an over-etched isolation layer. An isolation layer(20) is formed in a semiconductor substrate(10) to define an active region and a field region. A gate oxide layer(70), a gate(80) and a sidewall spacer(90) are formed on the active region. An ion implantation process is performed on the active region to form a source/drain region(100). A silicide layer(30), a borderless nitride layer(40) and an interlayer dielectric(50) are sequentially formed on the resultant structure. A contact hole(60) is formed which simultaneously exposes the source/drain region and the isolation layer. If the isolation layer is exposed to form a penetration region in forming the contact hole, a silicon compensation portion(A) is formed in the penetration region by an SEG(selective epitaxial growth) method. The SEG method can be compensated by gas including one of Si, Ge or Si-Ge.
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