发明名称 |
Rotated field effect transistors and method of manufacture |
摘要 |
An apparatus and method for manufacturing rotated field effect transistors. The method comprises providing a substrate including a first gate structure and a second gate structure, which are not parallel to each other. The method further includes performing a first ion implant substantially orthogonal to an edge of the first gate structure to form a first impurity region and performing a second ion implant at a direction different than that of the first ion implant and substantially orthogonal to an edge of the second gate structure to form a second impurity region under the edge of the second gate structure.
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申请公布号 |
US7335563(B2) |
申请公布日期 |
2008.02.26 |
申请号 |
US20050164070 |
申请日期 |
2005.11.09 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ANDERSON BRENT A.;BRYANT ANDRES;NA MYUNG-HEE;NOWAK EDWARD J. |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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