SILICON CARBIDE SEMICONDUCTOR DEVICE, AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device wherein the mobility of a carrier in a channel formation area is large, on-state resistance is low, and element characteristics are excellent; and to provide its manufacturing method.

SOLUTION: A channel layer 40 constituting a part of a carrier flow path between a source electrode 100 and a drain electrode 110 is provided on a drift layer 30. The channel layer 40 comprises a Ge granular crystal formed on the drift layer 30 and a cap layer covering the Ge granular crystal.

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