| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a composition for polishing that can be used more suitably in an application for polishing a conductive layer made of copper in a semiconductor wiring process, and to provide a polishing method using the composition for polishing. <P>SOLUTION: The composition for polishing contains an anion surface-active agent, such as polyoxyethylenelaurylether ammonium sulfate, and a nonion surface-active agent, such as polyoxyethylenealkylether. In the manufacture, an angle of contact with water of the surface of an object to be polished after polishing using the composition for polishing is set to not more than 60 degrees. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
