| 摘要 |
To provide a process for forming a resist pattern, which the process can adopt even ArF excimer laser light as exposure light in a patterning step, can thicken a resist pattern (e.g., a hole pattern) regardless of its size, and can reduce the size of a resist space pattern with high precision while preventing changes in the resist pattern shape, to thereby make this process easy, inexpensive and efficient while exceeding the exposure (resolution) limits of light sources of exposure devices. The process of the present invention for forming a resist pattern includes: forming a resist pattern; applying over a surface of the resist pattern a resist pattern thickening material; heating the resist pattern thickening material to thicken the resist pattern followed by development; and heating the resist pattern which has been thickened.
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