发明名称 CHARGE PUMP CIRCUIT
摘要 A charge pump circuit is provided to solve the problem of voltage drop while passing through each boosting stage and the problem of the increase of a threshold voltage by body bias effect according as an output voltage increases. A charge pump circuit includes a plurality of boosting stages(110), a first clock signal supply stage and a second clock signal supply stage. Each boosting stage comprises a pumping capacitor(Cp), a gate charging part(101) and a charge transfer switching part(102). The pumping capacitor boosts a voltage of a node connected to a corresponding pumping capacitor when a first or a second clock signal in a high state is applied to the corresponding pumping capacitor. The gate charging part comprises a diode and a first capacitor, and transfers the voltage of the node to the first capacitor. The charge transfer switching part comprises a transistor and a second capacitor, and transfers a voltage of a previous node to a post node.
申请公布号 KR100806519(B1) 申请公布日期 2008.02.21
申请号 KR20070016594 申请日期 2007.02.16
申请人 IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY) 发明人 KWON, OH KYONG
分类号 G11C11/4074;G11C5/14;G11C11/4076 主分类号 G11C11/4074
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