| 摘要 |
A semiconductor memory device includes a semiconductor substrate, a tunnel insulating layer, charge trap layer, and a blocking layer. The tunnel insulating layer is on the semiconductor substrate. The charge trap layer is on the tunnel insulating layer and includes at least one pair of a first nitride layer with a higher trap density of holes than electrons and a second nitride layer with a higher trap density of electrons than holes. The blocking layer is on the charge trap layer opposite to the tunnel insulating layer. The first nitride layer may include silicon rich nitride, which may have a ratio of silicon to nitride of greater than 1 and less than or equal to 2. The second nitride layer may include aluminum nitride which may have a hexagonal crystalline structure.
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