发明名称 |
TRANSPLANTED MAGNETIC RANDOM ACCESS MEMORY (MRAM) DEVICES ON THERMALLY-SENSITIVE SUBSTRATES USING LASER TRANSFER AND METHOD OF MAKING THE SAME |
摘要 |
A method of forming a magnetic memory device (and a resulting structure) on a low-temperature substrate, includes forming the memory device on a transparent substrate coated with a decomposable material layer subject to rapid heating resulting in a predetermined high pressure, and transferring the memory device to the low-temperature substrate.
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申请公布号 |
US2008044930(A1) |
申请公布日期 |
2008.02.21 |
申请号 |
US20070923858 |
申请日期 |
2007.10.25 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
GUPTA ARUNAVA |
分类号 |
H01L21/00;G11C;G11C7/00;H01L27/22;H01L43/12 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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