发明名称 TRANSPLANTED MAGNETIC RANDOM ACCESS MEMORY (MRAM) DEVICES ON THERMALLY-SENSITIVE SUBSTRATES USING LASER TRANSFER AND METHOD OF MAKING THE SAME
摘要 A method of forming a magnetic memory device (and a resulting structure) on a low-temperature substrate, includes forming the memory device on a transparent substrate coated with a decomposable material layer subject to rapid heating resulting in a predetermined high pressure, and transferring the memory device to the low-temperature substrate.
申请公布号 US2008044930(A1) 申请公布日期 2008.02.21
申请号 US20070923858 申请日期 2007.10.25
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 GUPTA ARUNAVA
分类号 H01L21/00;G11C;G11C7/00;H01L27/22;H01L43/12 主分类号 H01L21/00
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