SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a junction barrier Schottky diode and its manufacturing method. SOLUTION: The junction barrier Schottky diode includes a semiconductor layer having first conductivity type; a metal contact point which is located on the semiconductor layer and forms a Schottky junction part with the semiconductor layer; and a semiconductor region in the semiconductor layer. The semiconductor region and the semiconductor layer form a first p-n junction part in parallel with the Schottky junction part. The first p-n junction part is configured so as to generate a depletion region in the semiconductor layer adjacent to the Schottky junction part when a reverse bias is applied to the Schottky junction part. Therefore, the reverse leakage current which passes the Schottky junction part is limited. The first p-n junction part is configured so that a punch through of the first p-n junction part may occur at a voltage lower than a breakdown voltage of the Schottky junction part when the reverse bias is applied to Schottky junction part. COPYRIGHT: (C)2008,JPO&INPIT