| 摘要 |
A transparent electrode for a gallium nitride-based compound semiconductor light-emitting device includes a p-type semiconductor layer ( 5 ), a contact metal layer ( 1 ) formed by ohmic contact on the p-type semiconductor layer, an current diffusion layer ( 12 ) formed on the contact metal layer and having a lower magnitude of resistivity on the plane of the transparent electrode than the contact metal, and a bonding pad ( 13 ) formed on the current diffusion layer. The transparent electrode is at an advantage in widening the surface of light emission in the p-type semiconductor layer, decreasing the operation voltage in the forward direction, and enabling the bonding pad to provide excellent adhesive strength.
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