METHOD FOR MANUFACTURING GROUP III NITRIDE COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, GROUP III NITRIDE COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LAMP

摘要

Disclosed is a method for manufacturing a group III nitride compound semiconductor light-emitting device having excellent emission characteristics at high yield. Also disclosed are a group III nitride compound semiconductor light-emitting device and a lamp.Specifically disclosed is a method for manufacturing a group III nitride compound semiconductor light-emitting device, which comprises a step wherein a semiconductor layer composed of a group III nitride compound semiconductor containing Ga as a group III element is formed on a substrate (11) by sputtering. In this method, the substrate (11) and a sputtering target are arranged opposite to each other, and the distance between the substrate (11) and the sputtering target is set within the range of 20-100 mm. In addition, when the semiconductor layer is formed by sputtering, the bias value applied to the substrate (11) is set at 0.1 W/cm² or higher. Furthermore, when the semiconductor layer is formed, the sputtering is performed while supplying nitrogen and argon into a chamber which is used for the sputtering.