| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a new AP PECVD apparatus and a plasma thin film vapor deposition method. <P>SOLUTION: The plasma deposition apparatus includes a chamber, a pedestal installed in the chamber, a plasma generator including a plasma jet for plasma thin film vapor deposition having a discharge direction angle θ<SB>1</SB>of 0-90° between the normal direction of the pedestal and the discharge direction of the plasma jet, and a gas extractor including a gas extraction pipe which is installed on the pedestal in the chamber and provided with a pumping path for extracting particles and side-products having the extraction-direction angle θ<SB>2</SB>of 0-90°C between the normal direction of the pedestal and the extraction direction of the gas extraction pipe. <P>COPYRIGHT: (C)2008,JPO&INPIT |
