| 摘要 |
PROBLEM TO BE SOLVED: To provide an ion implantation method which can obtain a shallow junction in a germanium semiconductor device, solving a problem that a key technology for achieving a germanium semiconductor device capable of expecting a high speed treatment is a method for controlling a diffusion depth of impurity doped into a junction, however, since germanium is quicker in a diffusion speed of dopant in comparison with silicon, therefore, the depth of the junction becomes in excess, and an ion implantation method used in a prior manufacture of a semiconductor device based on silicon can not bring a practical germanium device manufacture. SOLUTION: The ion implantation method is to form the junction of the germanium semiconductor device shallowly. In a process for doping an impurity into germanium, after a pre-amorphous treatment making the vicinity of germanium surface amorphous by xenon ion implantation is carried out, the impurity is ion-implanted, whereby, the shallow junction can be obtained. COPYRIGHT: (C)2008,JPO&INPIT
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