| 摘要 |
PROBLEM TO BE SOLVED: To provide a post-etching treatment method capable of shortening time duration required for etching, an etching method, and to provide a method of manufacturing a display panel. SOLUTION: The post-etching treatment method comprises a step of placing a substrate 20 for a display panel on a lower electrode 112 provided in the inside of a reaction chamber 11, applying an RF alternating voltage, generating plasma between the lower electrode and an upper electrode 111 provided facing the lower electrode 112, and carrying out ashing. The ashing of a processing object is carried out, by generating a plasma between the upper electrode 111 and the lower electrode 112, and applying an alternating voltage having a frequency which exceeds the upper limit value of the ion plasma frequency and which lies within the range that is equal to or smaller than the upper limit value of an electronic plasma frequency, and an alternating voltage having frequency which is within the range equal to or lower than the upper-limit value of the ion plasma frequency are simultaneously applied to the lower electrode 112. COPYRIGHT: (C)2008,JPO&INPIT
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