发明名称 NICKEL ALLOY SPUTTERING TARGET
摘要 PROBLEM TO BE SOLVED: To provide a sputtering target for forming a barrier layer which is excellent in wettability with a Sn-Pb solder bump, can inhibit the diffusion of Sn being a component of the Sn-Pb solder, and can effectively prevent the reaction with an undercoat when the Sn-Pb solder bump is formed on the undercoat or a pad of a wiring and an electrode, formed on a substrate such as a semiconductor wafer and an electronic circuit, particularly the undercoat or the pad made of copper or a copper alloy. SOLUTION: The nickel alloy sputtering target for forming the barrier layer is a Ni-Sn alloy sputtering target capable of inhibiting the diffusion of Sn between the undercoat or the pad and the Sn-Pb solder bump. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008038249(A) 申请公布日期 2008.02.21
申请号 JP20070184471 申请日期 2007.07.13
申请人 NIKKO KINZOKU KK 发明人 OSADA KENICHI;SUZUKI SATORU
分类号 C23C14/34;B22F3/14;B22F9/08;C22C13/00;C22C19/03;C22F1/00;C22F1/10;C22F1/16;H01L21/28;H01L21/285 主分类号 C23C14/34
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