发明名称 Substrate processing method, substrate processing system and storage medium
摘要 [Subject In a plasma process using an ammonia gas after conducting a plasma process by using a process gas containing fluorine and carbon to a silicone-containing substrate, an ammonium silicofluoride having toxicity and water absorbancy is formed on the substrate. [Means for Solution]After conducting the plasma process using an ammonia gas, the substrate is heated to a temperature not lower than the decomposition temperature of the ammonium silicofluoride to decompose the ammonium silicofluoride in a process container in which the plasma process was conducted, or in a process container connected with the processing vessel which the plasma process was conducted therein and is isolated from a clean room atmosphere.
申请公布号 US2008045030(A1) 申请公布日期 2008.02.21
申请号 US20070889582 申请日期 2007.08.14
申请人 TAHARA SHIGERU 发明人 TAHARA SHIGERU
分类号 H01L21/461;H01L21/306 主分类号 H01L21/461
代理机构 代理人
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