| 摘要 |
<p>A method for forming a resist pattern, a method for preparing a semiconductor device by using the resist patter formed by the method, and a semiconductor device prepared by the method are provided to increase the thickness of a resist pattern irrespective of the size and to inhibit the deterioration of the shape of pattern. A method for forming a resist pattern comprises the steps of forming a resist pattern; coating a material comprising a resin and a compound represented by the formula 1 on the surface of the resist pattern; heating it; developing it to increase the thickness of the resist pattern; and further heating the resist pattern, wherein X is a group represented by the formula 2; Y is a hydroxyl group, an amino group, an alkyl-substituted amino group, an alkoxy group, an alkoxycarbonyl group, or an alkyl group; the number of the substituent is an integer of 0-3; m is an integer of 1 or more; n is an integer of 0 or more; R1 and R2 are identical or different each other and are H or a substituent; and Z is a hydroxyl group, an amino group, an alkyl-substituted amino group or an alkoxy group.</p> |
