发明名称 |
METHODS AND APPARATUS FOR DETERMINING THE ENDPOINT OF A CLEANING OR CONDITIONING PROCESS IN A PLASMA PROCESSING SYSTEM |
摘要 |
A method of determining an endpoint of a process by measuring a thickness of a layer, the layer being deposited on the surface by a prior process is disclosed. The method includes providing a sensor that is coplanar with the surface, wherein the sensor is configured to measure the thickness. The method also includes exposing the plasma chamber to a plasma, wherein the thickness is changed by the exposing, and determining the thickness as a function of time. The method further includes ascertaining a steady state condition in the thickness, the steady state condition being characterized by a substantially stable measurement of the thickness, a start of the steady state condition representing the endpoint.
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申请公布号 |
WO2006104841(B1) |
申请公布日期 |
2008.02.21 |
申请号 |
WO2006US10576 |
申请日期 |
2006.03.24 |
申请人 |
LAM RESEARCH CORPORATION;HUDSON, ERIC;KEIL, DOUGLAS;MARAKHTANOV, ALEXEI |
发明人 |
HUDSON, ERIC;KEIL, DOUGLAS;MARAKHTANOV, ALEXEI |
分类号 |
B05C11/00;B05C13/00;C23C16/00 |
主分类号 |
B05C11/00 |
代理机构 |
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