发明名称 THIN FILM TRANSISTOR ARRAY PANEL
摘要 The present invention provides a thin film transistor array panel comprising: an insulating substrate; a first signal line formed on the insulating substrate and extending in a first direction; a second signal line formed on the insulating substrate, extending in a second direction, and intersecting the first signal line; a thin film transistor connected to the first and second signal lines; a passivation layer formed on the second signal line and having a contact hole exposing a portion of the second signal line; and a pixel electrode formed on the passivation layer and connected to the thin film transistor through the contact hole, wherein the passivation layer is formed by coating an organic solution that includes an organic insulating material and a solvent including at least one of PGMEP, EEP, and nBA.
申请公布号 US2008044961(A1) 申请公布日期 2008.02.21
申请号 US20070777042 申请日期 2007.07.12
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 JEONG SOO-IM;LEE YOU-KYOUNG;JU JIN-HO
分类号 G02F1/136;H01L21/336;G02F1/1362;H01L21/77;H01L21/84;H01L27/12 主分类号 G02F1/136
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