| 摘要 |
A method of manufacturing semiconductor substrates. After supporting layers are provided on side walls of grooves formed in a semiconductor substrate, grooves that expose a second semiconductor layer are formed. Etching gas or etching liquid is brought in contact with the first semiconductor layer through the grooves, to form a void portion between the semiconductor substrate 1 and the second semiconductor layer. By thermally oxidizing the semiconductor substrate, the second semiconductor layer and the supporting layers, an oxide film is formed in the void portion between the semiconductor substrate and the second semiconductor layer, an oxide film is formed on side walls of the semiconductor substrate in the grooves, and the supporting layers are changed into oxide films.
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