| 摘要 |
In an embodiment, an improved charge pump circuit is provided to control a threshold voltage increase of a charge transmission transistor during a charge transfer period, and to prevent a latch-up generation during a charge non-transfer period. A charge transmission transistor transmits the voltage of a boosting node to a high voltage generation terminal in response to the voltage of a control node. In a bulk connection switch, during the charge transfer period the high voltage generation terminal is connected to the bulk of the charge transmission transistor and during the charge non-transfer period the bulk is connected to the low voltage, being lower than that of the voltage appearing at the boosting node of the charge transmission transistor or the high voltage generation terminal. Charge transmission efficiency and pumping operation reliability are improved, increasing the reliability of data access operations in a semiconductor memory device, for example.
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