| 发明名称 |
Methods of forming trench isolation layers using high density plasma chemical vapor deposition |
| 摘要 |
A method of forming a trench isolation layer can include forming an isolation layer in a trench using High Density Plasma Chemical Vapor Deposition (HDPCVD) with a carrier gas comprising hydrogen. Other methods are disclosed.
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| 申请公布号 |
US7332409(B2) |
申请公布日期 |
2008.02.19 |
| 申请号 |
US20050149307 |
申请日期 |
2005.06.09 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHA YONG-WON;NA KYU-TAE;CHOI YONG-SOON;HONG EUNKEE;GOO JU-SEON |
| 分类号 |
H01L21/76;H01L21/762 |
主分类号 |
H01L21/76 |
| 代理机构 |
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