发明名称 |
Infrared sensor and infrared sensor array |
摘要 |
An infrared sensor includes a series capacitor element and a reference capacitor element each exhibiting a predetermined capacitance value; an infrared-detecting capacitor element whose capacitance value varies depending on an intensity of infrared light incident on the element; and an output node being a node at which a first terminal of the series capacitor element, a first terminal of the reference capacitor element and a first terminal of the infrared-detecting capacitor element are connected to one another. The intensity of infrared light is output as a potential difference between the reference potential which is brought to a potential by applying a predetermined voltage between the series capacitor element and the reference capacitor element and the detection potential which is brought to a potential by applying a predetermined voltage between the series capacitor element and the infrared-detecting capacitor element.
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申请公布号 |
US7332717(B2) |
申请公布日期 |
2008.02.19 |
申请号 |
US20050580534 |
申请日期 |
2005.09.15 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
MURATA TAKAHIKO;YAMAGUCHI TAKUMI;KASUGA SHIGETAKA;YOSHIDA SHINJI;IKEDA YOSHITO |
分类号 |
G01J5/00 |
主分类号 |
G01J5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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