| 摘要 |
A high voltage generating circuit and semiconductor memory device having the same are provided, where the high voltage generating circuit includes a pumping driving signal generating means for sequentially generating n-number of pumping driving signals in response to m-number of control signals, where n is greater than m; n-number of pumping control signal generating circuits for generating n-number of pumping control signals in response to the n-number of pumping driving signals, respectively; and n-number of pumping circuits for performing a pumping operation to pump a high voltage level in response to each of the n-number pumping control signals; such that it is possible to reduce a row cycle time regardless of a pumping cycle time, thereby achieving a high speed operation.
|
