| 摘要 |
PROBLEM TO BE SOLVED: To provide a trench power MOSFET which has a gate protecting diode therein without increasing a chip area. SOLUTION: The trench power MOSFET comprises a first conductivity-type epitaxial layer 2, a second conductivity-type body layer 3, and a first conductivity-type source diffusion layer 7 on a first conductivity-type semiconductor substrate 1; further comprises a trench gate electrode 22 which penetrates the source diffusion layer 7 and the body layer 3, and is formed in a trench reaching the epitaxial layer 2. Between an upper region of the trench gate electrode 22 and an upper region of the source diffusion layer 7, a first conductivity-type polysilicon layer 10 and a second conductivity-type polysilicon layer 12 are alternately formed in a direction parallel to the semiconductor substrate 1, and the trench gate electrode 22 is connected to the source diffusion layer 7 through at least two or more polysilicon layers 10 and at least one or more polysilicon layers 12. COPYRIGHT: (C)2008,JPO&INPIT
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