MANUFACTURING METHOD OF FIN STRUCTURE AND FIN TRANSISTOR ADOPTING THE FIN STRUCTURE

摘要

A fin structure and a manufacturing method of a fin transistor using the same are provided to facilitate control of thickness and location of the fin structure by preventing deformation of the fin structure in a chemical mechanical polishing process through a capping layer. A manufacturing method of a fin transistor using a fin structure comprises the steps of: forming a plurality of mesa structures having a side wall corresponding to the fin structure on a substrate(1); forming an amorphous semiconductor layer(3) having a part directly formed on a surface of the substrate and a part formed in the side wall of the mesa structure; forming a capping layer(4) on the amorphous semiconductor layer; partially removing at least the amorphous semiconductor layer positioned on the mesa structure from the capping layer; and removing the mesa structure and the capping layer from a top with a predetermined depth.