| 摘要 |
A method for performing etching process by using plasma of a processing gas. The etching process is performed to a body (W) to be processed, which has a substrate (101), base films (102, 103) formed on the substrate, and a film (104) which is to be etched and is formed on the base films. As the processing gas, a main etching gas composed of a chlorine containing gas and an oxygen containing gas, and a nitrogen containing gas is used. The etching method is characterized in that etching is performed under the conditions where the ratio N2+/N2 of the strength of N2+ obtained from the plasma emission spectrum to the strength of N2 is 0.6 or higher.
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