| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide: a p-type zinc oxide thin film which can be clearly proven to be a p-type semiconductor based on the magnetic field dependence of Hall voltage by Hall effect measurement by Hall bar; a method for manufacturing the thin film with good reproduction; and a light emitting element using the thin film. <P>SOLUTION: Regarding the preparation of a p-type zinc oxide thin film, a method for converting zinc oxide to p-type is proposed. The method is characterized in that a p-type semiconductor is obtained by combining a step of annealing a p-type dopant added to a thin film at an elevated temperature to activate the p-type dopant or a step of irradiating the surface of a substrate with an active species of a p-type dopant during film formation to dope the p-type dopant in an activated state, with a step of conducting annealing at a low temperature in an oxidizing atmosphere, in order to develop p-type semiconductor properties of zinc oxide. There are also provided a p-type zinc oxide thin film obtained by the above method and a light emitting element using the same. The above constitution can provide a highly reliable p-type zinc oxide thin film, a preparation method of the thin film, and a blue light emitting element using the thin film. <P>COPYRIGHT: (C)2008,JPO&INPIT |
