GROWING METHOD OF NITRIDE SINGLE CRYSTAL ON SILICON SUBSTRATE, NITRIDE-SEMICONDUCTOR LIGHT-EMITTING ELEMENT USING THE SAME AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a growing method of nitride single crystal on a silicon substrate, and a nitride-semiconductor light-emitting element that uses the same, and also to provide a method of manufacturing a nitride light-emitting element that uses the growing method of a nitride single crystal.

SOLUTION: This growth method of nitride single crystal comprises a step of preparing a silicon substrate 31, having the top face of (111) crystal orientation; a step of forming a first nitride buffer layer 32 on the top face of the silicon substrate; a step of forming an amorphous oxide thin film 33 on the first nitride buffer layer; a step of forming a second nitride buffer layer 34 on the amorphous oxide thin film; and a step of forming a nitride single crystal on the second nitride buffer layer. Additionally, a manufacturing method of nitride-light-emitting element that uses this growing method of nitride single crystal is provided.

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