| 摘要 |
PROBLEM TO BE SOLVED: To materialize a metal gate CMOS semiconductor device which suppresses damages to a semiconductor substrate, a gate insulating film, and first and second electroconductive layers (metal gate electrode materials) in a production process as much as possible, prevents an increase of a gate resistance value and a gate leakage current, and is extremely high reliable. SOLUTION: A second electroconductive layer 8 and a mask layer 6 are dry-etched by use of a resist mask 9 for removing them. When this takes place, the second electroconductive layer 8 is left so as to cover only a portion equivalent onto an nMOS region 2b following a shape of the resist mask 9 and alienate on an element isolation structure 4 from a first electroconductive layer 5. COPYRIGHT: (C)2008,JPO&INPIT
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