| 摘要 |
PROBLEM TO BE SOLVED: To quantitatively and correctly recognize by using a sample for analysis an impact to a semiconductor device or the like given by hydrogen generated in manufacturing the semiconductor device or the like, for example various impacts by the hydrogen which are affected to a ferroelectric film, that is, a capacitor film in manufacturing an FRAM and are weak points of the ferroelectric film. SOLUTION: On a silicon wafer 11, a Ti film 12 with a characteristic of occluding the hydrogen, and an HDP-SIO film 13 formed in an atmosphere containing the hydrogen, are sequentially laminated and formed to produce a sample 10 for analysis. A TDS analysis is performed by using this sample 10 for analysis, and consequently a result thereof is served as a quantitative evaluation of a damage by the hydrogen to a PZT film. COPYRIGHT: (C)2008,JPO&INPIT
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