| 摘要 |
A semiconductor device. The semiconductor device includes a substrate includes: a substrate having a first gate stack on a surface of the substrate, wherein the first gate stack has a top surface parallel to the surface of the substrate and sidewalls perpendicular to the surface of the substrate; an etch resistant first liner over the sidewalls of the first gate stack and not over the top surface of the first gate stack; a first outer spacer over the first liner, wherein the first liner is disposed between the first outer spacer and the sidewalls of the first gate stack, and wherein a portion of the first liner covers a first portion of the surface of the substrate; an insulative layer on a second portion of the surface of the substrate; and a conductive layer on the top surface of the first gate stack.
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