GERMANIUM COMPOUND, SEMICONDUCTOR DEVICE FABRICATED USING THE SAME, AND METHODS OF FORMING THE SAME

摘要

A germanium (Ge) compound is provided. The Ge compound has a chemical formula GeR¹xR²y. "R¹" is an alkyl group, and "R²" is one of hydrogen, amino group, allyl group and vinyl group. "x" is greater than zero and less than 4, and the sum of "x" and "y" is equal to 4. Methods of forming the Ge compound, methods of fabricating a phase change memory device using the Ge compound, and phase change memory devices fabricated using the Ge compound are also provided.