发明名称 PACKAGE-BASE STRUCTURE OF POWER SEMICONDUCTOR DEVICE AND MANUFACTURING PROCESS OF THE SAME
摘要 A process of manufacturing a package base of a power semiconductor device includes the following steps. Firstly, a semiconductor substrate including a first surface and a second surface is provided. Then, a portion of the semiconductor substrate is patterned and removed to form a recess on the first surface of the semiconductor substrate, which serves as a receiving space for receiving a power semiconductor element therein. Then, a conducting layer is overlaid on the first surface including the receiving space. Afterward, a portion of the conducting layer is patterned and removed to form a conducting structure to be electrically connected to the power semiconductor device.
申请公布号 US2008036045(A1) 申请公布日期 2008.02.14
申请号 US20070836036 申请日期 2007.08.08
申请人 SILICON BASE DEVELOPMENT INC. 发明人 CHEN CHIH-MING;CHENG CHING-CHI;WEN AN-NONG
分类号 H01L31/036;H01L21/44 主分类号 H01L31/036
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