PHOTOACTIVE MATERIALS CONTAINING BULK AND QUANTUM-CONFINED SEMICONDUCTOR STRUCTURES AND OPTOELECTRONIC DEVICES MADE THEREFROM

摘要

The present invention provides photoactive materials that include quantum-confined semiconductor nanostructures in combination with non-quantum confined and bulk semiconductor structures to enhance or create a type II band offset structure. The photoactive materials are well-suited for use as the photoactive layer in photoactive devices, including photovoltaic devices, photoconductors and photodetectors.