发明名称 |
ZIRCONIUM SUBSTITUTED BARIUM TITANATE GATE DIELECTRICS |
摘要 |
<p>The use of atomic layer deposition (ALD) to form a zirconium substituted layer of barium titanium oxide (BaTiO3), produces a reliable structure for use in a variety of electronic devices such as a dielectric in nonvolatile random access memories (NVRAM), tunable dielectrics for multi layer ceramic capacitors (MLCC), infrared sensors and electro-optic modulators. The structure is formed by depositing alternating layers of barium titanate and barium zirconate by ALD on a substrate surface using precursor chemicals, and repeating to form a sequentially deposited interleaved structure of desired thickness and composition. Such a layer may be used as the gate insulator of a MOSFET, or as a capacitor dielectric. The properties of the dielectric may be tuned by adjusting the percentage of zirconium to titanium to optimize properties such as a dielectric constant, Curie point, film polarization, ferroelectric property and a desired relaxor response.</p> |
申请公布号 |
WO2008018994(A1) |
申请公布日期 |
2008.02.14 |
申请号 |
WO2007US16801 |
申请日期 |
2007.07.25 |
申请人 |
MICRON TECHNOLOGY, INC.;AHN, KIE Y;FORBES, LEONARD |
发明人 |
AHN, KIE Y;FORBES, LEONARD |
分类号 |
G01L21/28;C23C16/455;H01L21/02;H01L21/314;H01L21/316;H01L29/51;H01L29/78;H01L29/788;H01L29/92 |
主分类号 |
G01L21/28 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|