NITRIDE SEMICONDUCTOR LIGHT EMITTING DIODE

摘要

A nitride semiconductor light emitting diode is provided to achieve high brightness by forming two active layers outputting a light with the same wavelength in one LED. A first n-type nitride semiconductor layer(120a) is formed on a substrate(110). At least two nitride semiconductor layers having different energy band are deposited on a predetermined portion of the n-type nitride semiconductor layer to form a current diffusion layer. A first active layer(130a) is formed on the current diffusion layer, and a p-type nitride semiconductor layer(140) is formed on the first active layer. A second active layer(130b) is formed on the p-type nitride semiconductor layer. A first n-type electrode(160a) is formed on the first n-type nitride semiconductor layer without the first active current diffusion layer, and a p-type electrode(170) is formed on the p-type nitride semiconductor layer without the second active layer. A second n-type nitride semiconductor layer(120b) is formed on the second active layer, and a second n-type electrode(160b) is formed on the second n-type nitride semiconductor layer.