发明名称 CHARGED PARTICLE BEAM IRRADIATION METHOD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a charged particle beam irradiation method which is effective in observing a semiconductor device which comprises a variety of micro hole patterns. SOLUTION: The charged particle beam irradiation method includes: a step S1 of setting an observation region containing a target pattern to a sample containing the target pattern as a target to be observed; a step S2 of setting an irradiation region which contains the observation region and is wider than the observation region, and on which charged particle beams are irradiated, and of setting a non-irradiation region on which the charged particle beams are not irradiated on the irradiation region; a step 3 of irradiating the charged particle beams on the irradiation region other than the non-irradiation region: and a step 4 of irradiating the charged particle beams on the observation region after the step of irradiating the charged particle beams on the irradiation region. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008034750(A) 申请公布日期 2008.02.14
申请号 JP20060208940 申请日期 2006.07.31
申请人 TOSHIBA CORP 发明人 ABE HIDEAKI
分类号 H01L21/66 主分类号 H01L21/66
代理机构 代理人
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