| 摘要 |
PROBLEM TO BE SOLVED: To provide a processing apparatus having a high processing efficiency and capable of producing a semiconductor device of high quality. SOLUTION: The processing apparatus comprises: a processing unit selected from a group of a titanium nitride layer forming unit, a tantalum nitride layer forming unit, and a tungsten nitride layer forming unit disposed around a transferring chamber capable of maintaining its inside at a predetermined pressure and processing a target substrate; two or more titanium layer forming units and two or more tungsten layer forming units, one or more preliminary cleaning processing units disposed around the transferring chamber and processing the target substrate under the predetermined pressure; and a transferring arm disposed within the transferring chamber and transferring a target substrate, wherein at least one of the units is disposed in the vertical direction with respect to the other units. COPYRIGHT: (C)2008,JPO&INPIT
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