METHOD OF FABRICATING SEMICONDUCTOR DEVICES ON A GROUP IV SUBSTRATE WITH CONTROLLED INTERFACE PROPERTIES AND DIFFUSION TAILS
摘要
<p>Electronic and opto-electronic devices having epitaxially-deposited III/V compounds on vicinal group IV substrates and method for making same. The devices include an AlAs nucleating layer on a Ge substrate. The group IV substrate contains a p-n junction whose change of characteristics during epitaxial growth of As-containing layers is minimized by the AlAs nucleating layer. The AlAs nucleating layer provides improved morphology of the devices and a means to control the position of a p-n junction near the surface of the group IV substrate through diffusion of As and/or P and near the bottom of the III/V structure through minimized diffusion of the group IV element.</p>
申请公布号
WO2008017143(A1)
申请公布日期
2008.02.14
申请号
WO2007CA01278
申请日期
2007.07.19
申请人
CYRIUM TECHNOLOGIES INCORPORATED;PUETZ, NORBERT;FAFARD, SIMON;RIEL, JOSEPH, RENE, BRUNO
发明人
PUETZ, NORBERT;FAFARD, SIMON;RIEL, JOSEPH, RENE, BRUNO