| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a new pattern forming method that can reduce the number of steps in a double patterning method, and to provide a material for forming a metal oxide film suitably used for the pattern forming method, and a use method of the material. <P>SOLUTION: A pattern comprising a plurality of coated patterns 5 and a resist pattern 7 formed in a second resist film 6 is formed on a support body through steps of: applying a first chemical amplification type resist composition on a support body 1 to form a first resist film 2; selectively exposing and developing the first resist film 2 to form a plurality of resist patterns 3; forming a coating film made of a metal oxide film on each surface of the resist patterns 3 to form a plurality of coated patterns 5; applying a second chemical amplification type resist composition on the support body 1 where the coated patterns 5 are formed, to form a second resist film 6; and selectively exposing and developing the second resist film 6. <P>COPYRIGHT: (C)2008,JPO&INPIT |
