| 摘要 |
The present invention provides a semiconductor apparatus having the improved thermal fatigue life against temperature change by lowering the maximum temperature on a jointing member existing between a semiconductor element and an electrode terminal and reducing the range of the temperature change. The semiconductor apparatus has a jointing member placed in between a semiconductor chip and a lead electrode to make the jointing member joint the semiconductor chip with the lead electrode; has a thermal stress relaxation body arranged between the semiconductor chip and a support electrode; has jointing members respectively placed between the thermal stress relaxation body and the semiconductor chip and between the thermal stress relaxation body and the support electrode, and makes the first thermal stress relaxation body connected to the support electrode; wherein the second thermal stress relaxation body is made from a material which has a thermal expansion coefficient in between the coefficients of the semiconductor chip and the lead electrode, and the first thermal stress relaxation body is made from a material which has a thermal expansion coefficient in between the coefficients of the semiconductor chip and the support electrode, and has a thermal conductivity of 50 to 300 W/(m.° C.).
|
