| 摘要 |
<p>Provided is a reaction tube, which can eliminate causes of having sources for generating impurities, such as GaN, AlN and InN, which are taken into an epitaxial film of a nitride semiconductor. A semiconductor manufacturing method, an epitaxially growing apparatus and an epitaxially growing method are also provided. The reaction tube used for crystal growing or heat treatment in invention (1) employs a constitution characterized in forming at least a susceptor periphery of sapphire. The semiconductor manufacturing method, the epitaxially growing apparatus, the epitaxially growing method in invention (2) are characterized in using the reaction tube in invention (1).</p> |
