| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To solve the problem, wherein it is extremely difficult to operate mechanical cutting processings on a crystal piece sized that is to be loaded in a crystal device, while the thickness of a crystal wafer is one hundred and tens ofμm, even when it is thick even, when forming a crystal wafer with desired thickness on the whole main surface of a plate-shaped substrate for crystal film formation, in a method for manufacturing a crystal piece by a crystal wafer formed on the substrate for crystal film formation, using a conventional vapor phase crystal growth method. <P>SOLUTION: This method for manufacturing a crystal piece is provided with a process for arranging a substrate for crystal film formation in the crystal growth chamber of a vapor phase crystal growth device, by using a substrate for crystal film formation in which projected sections whose top ends are respectively formed with a flat face whose outer shape is the same as the main face outer shape of a crystal piece are formed into a matrix form on one main face; a process for making the crystal piece grow by a vapor phase crystal growth method on a buffer layer, formed on the substrate for crystal film formation; and a process for extracting the substrate for crystal film formation from the crystal growth chamber, and for individually separating the crystal piece from the substrate for crystal film formation for each buffer layer. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
